| PART |
Description |
Maker |
| 2SK1450 |
20 A, 450 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PB
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
|
Sanyo
|
| FDS6961AZ FDS6961AZL86Z FDS6961AZL99Z |
3.5 A, 30 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET SO-8
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 3.5A I(D) | SO
Dual N-Channel Logic Level PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
|
| 2SK3560 |
Silicon N-channel power MOSFET For PDP/For high-speed switching 30 A, 230 V, 0.074 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| Q62702-F1772 BF2000W |
From old datasheet system
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 2SK3781-01R |
DIODE SCHOTTKY SINGLE 25V 200mW 0.33V-vf 200mA-IFM 2mA-IF 0.5uA-IR SOD-323 3K/REEL 73 A, 200 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
N-CHANNEL SILICON POWER MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| 2SK3588-01L 2SK3588-01S 2SK3588-01SJ |
N-CHANNEL SILICON POWER MOSFET 73 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| 2SK3512-01L 2SK3512-S 2SK3512-SJ 2SK3512 2SK3512-0 |
N-CHANNEL SILICON POWER MOSFET N沟道功率MOSFET
MOSFETs 12 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| HAT1023R-EL-E HAT1023R |
7 A, 20 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOSFET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| CPH5852 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| VEC2815 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| 2SK947 2SK947-MR |
N-CHANNLEL SILICON POWER MOSFET 12 A, 250 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-CHANNLEL SILICON POWER MOSFET - CHANNLEL硅功率MOSFET
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
|
